PART |
Description |
Maker |
2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor Bipolar Transistor Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
CPH6223-TL-E |
Bipolar Transistor Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Low Vce(sat) Transistor (-20V, -3A) From old datasheet system Low VCE(sat) Transistor(低VCE(sat)晶体 Low Vce(sat) Transistor (-20V/ -3A)
|
ROHM[Rohm] Rohm CO.,LTD.
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305 |
SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a> Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http:// ST Microelectronics, Inc. STMicroelectronics
|
2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB NPN BIPOLAR TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
2N3765U4 2N3764U4 JANS2N3764U4 JANSD2N3764U4 JAN2N |
PNP Transistor BJT( BiPolar Junction Transistor)
|
Microsemi
|